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  ddtcxxxxlp (r1 r2 series) document number: ds30755 rev. 7 - 2 1 of 7 www.diodes.com march 2009 ? diodes incorporated ddtcxxxxlp ( r1 r2 series ) pre-biased small signal surface mount 100ma npn transistor features ? epitaxial planar die construction ? ultra-small leadless surface mount package ? ideally suited for automated assembly processes ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability part number r1 (nom) r2 (nom) ddtc123jlp 2.2k 47k ddtc143zlp 4.7k 47k ddtc114ylp 10k 47k mechanical data ? case: dfn1006-3 ? case material: molded plasti c, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminal connections: co llector dot (see diagram and marking information) ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? marking information: see page 6 ? ordering information: see page 6 ? weight: 0.0009 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic p/n symbol value unit supply voltage v cc 50 v input voltage ddtc123jlp v in -5 to +12 v ddtc143zlp -5 to +30 ddtc114ylp -5 to +40 output voltage ddtc123jlp i o 100 ma ddtc143zlp 100 ddtc114ylp 70 maximum collector current i c ( max ) 100 ma thermal characteristics characteristic symbol value unit power dissipation (note 3) p d 250 mw power deration above 25 c p de r 2 mw/ c thermal resistance, junction to ambient air (note 3) (equivalent to one heated junction of npn) r ja 500 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our webs ite at http://www.diodes.com/pr oducts/lead_free/index.php. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as show n on diodes inc. suggested pad layout docu ment ap02001, which can be found on page 6 or our webs ite at http://www.diodes.com/datasheets/ap02001.pdf. bottom view device schematics package pin out configuration 1 b c e 2 3 in r 1 r 2 out gnd in b 1 2 3 c e gnd out c 1 2 3 r 1 r 2 e b
ddtcxxxxlp (r1 r2 series) document number: ds30755 rev. 7 - 2 2 of 7 www.diodes.com march 2009 ? diodes incorporated ddtcxxxxlp ( r1 r2 series ) electrical characteristics @t a = 25c unless otherwise specified characteristic p/n symbol min typ max unit test condition off characteristics (note 4) collector-base breakdown voltage v ( br ) cbo 50 ? ? v i c = 10 a, i e = 0 collector-emitter breakdown voltage * v ( br ) ceo 50 ? ? v i c = 2ma, i b = 0 emitter-base breakdown voltage * v ( br ) ebo 4.5 ? ? v i e = 50 a, i c = 0 collector cutoff current * i cex ? ? 0.5 a v ce = 50v, v eb ( off ) = 3.0v base cutoff current (i be x ) i bl ? ? 0.5 a v ce = 50v, v eb ( off ) = 3.0v collector-base cut off current i cbo ? ? 0.5 a v cb = 50v, i e = 0 collector-emitter cut off current, i o ( off ) i ceo ? ? 0.5 a v ce = 50v, i b = 0 emitter-base cut off current i ebo ? ? 0.5 ma v eb = 5v, i c = 0 input-off voltage v i ( off ) ? ? 0.5 v v ce = 5v, i c = 100 a on characteristics (note 4) base-emitter turn-on voltage* ddtc123jlp v be(on) ? ? 0.85 v v ce = 5v, i c = 2ma ddtc143zlp ? ? 0.85 ddtc114ylp ? ? 0.95 base-emitter saturation voltage* ddtc123jlp v be(sat) ? ? 0.98 v i c = 10ma, i b = 1ma, v ce =5v ddtc143zlp ? ? 0.998 ddtc114ylp ? ? 0.98 input-on voltage v i ( on ) 1.1 ? ? v v o = 0.3v, i c = 5ma input current ddtc123jlp i i ? ? 7.2 ma v i = 5v ddtc143zlp ? ? 1.5 ddtc114ylp ? ? 7.2 dc current gain h fe 50 ? ? ? v ce = 5v, i c = 1ma 70 ? ? ? v ce = 5v, i c = 2ma 125 ? ? ? v ce = 5v, i c = 5ma 150 ? ? ? v ce = 5v, i c = 10ma 180 ? ? ? v ce = 5v, i c = 50ma collector-emitter saturation voltage v ce(sat) ? ? 0.15 v i c = 10ma, i b = 1ma ? ? 0.2 v i c = 50ma, i b = 5ma output on voltage (same as v ce ( sat ) ) v o ( on ) ? ? 0.3 i j = 2.5ma, i o = 50ma input resistor +/-30% r1 -30 ? 30 % ? resistor ratio (r2/r1) -20 ? -20 % ? small signal characteristics transition frequency (gain bandwidth product) f t ? 250 ? mhz v ce = 10v, i e = 5ma, f = 100mhz *guaranteed by design notes: 4. short duration pul se test used to mini mize self-heating effect. pulse test: pulse width, tp<300 us, duty cycle, d<=0.02 typical characteristics curves @t a = 25c unless otherwise specified 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 r = 500 c/w ja p , p o we r dissi p a t i o n (mw ) d t , ambient temperature ( c) fig. 1 power dissipation vs. ambient temperature (note 3) a
ddtcxxxxlp (r1 r2 series) document number: ds30755 rev. 7 - 2 3 of 7 www.diodes.com march 2009 ? diodes incorporated ddtcxxxxlp ( r1 r2 series ) characteristics curves of ddtc123jlp @t a = 25c unless otherwise specified 0 50 100 150 200 250 300 350 0.1 1 10 100 1,000 v = 5v ce h, d c c u r r e n t g ai n fe i , collector current (ma) fig. 2 typical dc current gain vs. collector current c t = 150 c a t = 85 c a t = -55 c a t = 25 c a 0.1 1 10 100 i/i = 10 cb v , collector emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 3 typical collector emitter saturation voltage vs. collector current c t = 150 c a t = 85 c a t = -55 c a t = 25 c a 0 0.03 0.06 0.09 0.12 0.15 01234 5678910 v , collector emitter voltage (v) fig. 4 typical collector current vs. collector emitter voltage ce i, c o lle c t o r c u r r e n t (a) c i = 5.0ma b i = 4.0ma b i = 3.5ma b i = 3.0ma b i = 4.5ma b i = 2.5ma b i = 1.5ma b i = 1.0ma b i = 0.5ma b i = 2.0ma b 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60 -30 0 30 60 90 120 150 v = 0.3v o i = 5ma o t , ambient temperature ( c) fig. 5 typical input voltage vs. ambient temperature a v, in p u t v o l t a g e (v) i(on) 0 1.5 3 4.5 0.1 1 10 100 v = 5v ce v , base emi t t e r v o l t a g e (v) be i , collector current (ma) fig. 6 typical base emitter voltage vs. collector current c t = 25 c a t = -55 c a t = 85 c a t = 150 c a 0 3 6 9 12 15 18 21 24 27 30 0.1 1 10 100 i/i = 10 cb v , base emitter saturation voltage (v) be(sat) i , collector current (ma) fig. 7 typical base emitter saturation voltage vs. collector current c t = 25 c a t = -55 c a t = 85 c a t = 150 c a
ddtcxxxxlp (r1 r2 series) document number: ds30755 rev. 7 - 2 4 of 7 www.diodes.com march 2009 ? diodes incorporated ddtcxxxxlp ( r1 r2 series ) characteristics curves of ddtc143zlp @t a = 25c unless otherwise specified 0 50 100 150 200 250 300 350 0.1 1 10 100 1,000 v = 5v ce h, d c c u r r e n t g ai n fe i , collector current (ma) fig. 8 typical dc current gain vs. collector current c t = 150 c a t = 85 c a t = -55 c a t = 25 c a 0.01 0.1 1 10 100 0.1 1 10 100 1,000 i/i = 10 cb v , collector emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 9 typical collector emitter saturation voltage vs. collector current c t = 150 c a t = 85 c a t = -55 c a t = 25 c a 0 0.01 0.02 0.03 0.04 0.05 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , collector emitter voltage (v) fig. 10 typical collector current vs. collector emitter voltage ce i, c o lle c t o r c u r r en t (a) c 0 3 6 9 12 15 0.1 1 10 100 i , output current (ma) fig. 11 typical input voltage vs. output current c v, in p u t v o l t a g e (v) i(on) t = 25 c a t = -55 c a t = 85 c a t = 150 c a 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100 v = 5v ce v , base emi t t e r v o l t a g e (v) be i , collector current (ma) fig. 12 typical base emitter voltage vs. collector current c t = 25 c a t = -55 c a t = 85 c a t = 150 c a 0 3 6 9 12 15 18 21 24 27 30 0 . 111 01 0 0 i/i = 10 cb v , base emitter saturation voltage (v) be(sat) i , collector current (ma) fig. 13 typical base emitter saturation voltage vs. collector current c t = 25 c a t = -55 c a t = 85 c a t = 150 c a
ddtcxxxxlp (r1 r2 series) document number: ds30755 rev. 7 - 2 5 of 7 www.diodes.com march 2009 ? diodes incorporated ddtcxxxxlp ( r1 r2 series ) characteristics curves of ddtc114ylp @t a = 25c unless otherwise specified 0 50 100 150 200 250 300 350 0.1 1 10 100 1,000 v = 5v ce h, d c c u r r en t g ain fe i , collector current (ma) fig. 14 typical dc current gain vs. collector current c t = 150 c a t = 85 c a t = -55 c a t = 25 c a 0.01 0.1 1 10 0.1 1 10 100 i/i = 10 cb v , collector emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 15 typical collector emitter saturation voltage vs. collector current c t = 150 c a t = 85 c a t = -55 c a t = 25 c a 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 01 23 4 5678910 v , collector emitter voltage (v) fig. 16 typical collector current vs. collector emitter voltage ce i, c o lle c t o r c u r r en t (a) c i = 0.9ma b i = 0.8ma b i = 0.6ma b i = 1.0ma b i = 0.5ma b i = 0.3ma b i = 0.2ma b i = 0.1ma b i = 0.4ma b i = 0.7ma b 0 0.3 0.6 0.9 1.2 1.5 -60 -30 0 30 60 90 120 150 v = 0.3v o i = 5ma o t , ambient temperature ( c) fig. 17 typical input voltage vs. ambient temperature a v , in p u t v o l t a g e (v) i(on) 0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15 0.1 1 10 100 v = 5v ce v , base emi t t e r v o l t a g e (v) be i , collector current (ma) fig. 18 typical base emitter voltage vs. collector current c t = 25 c a t = -55 c a t = 85 c a t = 150 c a 0 3 6 9 12 15 18 21 24 27 30 0.1 1 10 100 i/i = 10 cb v , base emitter saturation voltage (v) be(sat) i , collector current (ma) fig. 19 typical base emitter saturation voltage vs. collector current c t = 25 c a t = -55 c a t = 85 c a t = 150 c a
ddtcxxxxlp (r1 r2 series) document number: ds30755 rev. 7 - 2 6 of 7 www.diodes.com march 2009 ? diodes incorporated ddtcxxxxlp ( r1 r2 series ) ordering information (note 5) part number case packaging ddtc123jlp-7 dfn1006-3 3000/tape & reel DDTC143ZLP-7 dfn1006-3 3000/tape & reel ddtc114ylp-7 dfn1006-3 3000/tape & reel notes: 5. for packaging details, go to our w ebsite at http://www.diodes .com/datasheets/ap02007.pdf. marking information package outline dimensions suggested pad layout dfn1006-3 dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e ? ? 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 ? ? 0.40 all dimensions in mm dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 nx = product type marking code: ddtc123jlp = n0 ddtc143zlp = n1 ddtc114ylp = n2 dot denotes collector, pin 3 nx l2 a1 e b2 l1 l3 d e b1 a y c g1 g2 x x 1 z
ddtcxxxxlp (r1 r2 series) document number: ds30755 rev. 7 - 2 7 of 7 www.diodes.com march 2009 ? diodes incorporated ddtcxxxxlp ( r1 r2 series ) important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com


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